Semiconductor Devices and Methods of Manufacture Thereof

ABSTRACT

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including a conductive feature formed in a first insulating material and a second insulating material disposed over the first insulating material. The second insulating material has an opening over the conductive feature. The method includes forming a graphene-based conductive layer over an exposed top surface of the conductive feature within the opening in the second conductive material, and forming a carbon-based adhesive layer over sidewalls of the opening in the second insulating material. A carbon nano-tube (CNT) is formed in the patterned second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area.

Conductive materials such as metals or semiconductors are used insemiconductor devices for making electrical connections for theintegrated circuits. For many years, aluminum was used as a metal forconductive materials for electrical connections, and silicon dioxide wasused as an insulator. However, as devices are decreased in size, thematerials for conductors and insulators have changed, to improve deviceperformance.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a perspective view of a semiconductor device including aplurality of carbon nano-tubes (CNT's) in accordance with someembodiments of the present disclosure;

FIGS. 2 through 6 are cross-sectional views of a method of manufacturinga semiconductor device at various stages of manufacturing in accordancewith some embodiments;

FIG. 7 is a perspective view of a graphene-based conductive layercomprising a plurality of graphene sheets (GS's) in accordance with someembodiments;

FIGS. 8 through 10 are cross-sectional views of a method ofmanufacturing a semiconductor device at various stages of manufacturingin accordance with some embodiments;

FIGS. 11 through 13 are cross-sectional views of a method ofmanufacturing a semiconductor device at various stages of manufacturingin accordance with some embodiments;

FIGS. 14 and 15 are cross-sectional views of a method of manufacturing asemiconductor device at various stages of manufacturing in accordancewith some embodiments;

FIG. 16 is a cross-sectional view of a semiconductor device inaccordance with some embodiments; and

FIG. 17 is a flow chart of a method of manufacturing a semiconductordevice in accordance with some embodiments.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of some of the embodiments of the presentdisclosure are discussed in detail below. It should be appreciated,however, that the present disclosure provides many applicable inventiveconcepts that can be embodied in a wide variety of specific contexts.The specific embodiments discussed are merely illustrative of specificways to make and use the disclosure, and do not limit the scope of thedisclosure.

Some embodiments of the present disclosure are related to semiconductordevices and methods of manufacture thereof. Novel semiconductor deviceshaving carbon nano-tubes (CNT's) as via interconnects will be describedherein.

FIG. 1 is a perspective view of a semiconductor device 100 including aplurality of CNT's 120 in accordance with some embodiments of thepresent disclosure. The semiconductor device 100 includes a workpiece102 and an insulating material 104 disposed over the workpiece 102. Aconductive feature 106 is formed over a portion of the insulatingmaterial 104 in accordance with some embodiments. The conductive feature106 is formed within an entire thickness of the insulating material 104in other embodiments. A graphene-based conductive layer 110 is disposedover at least a portion of the conductive feature 106. A plurality ofCNT's 120 are formed over the graphene-based conductive layer 110 withinan insulating material (not shown in FIG. 1; see insulating material 114shown in FIG. 8). Embodiments of the present disclosure include novelmethods of forming the graphene-based conductive layer 110, forming acarbon-based adhesive layer over sidewalls of openings in the insulatingmaterial 114 (also not shown in FIG. 1; see carbon-based adhesive layer112 shown in FIG. 8), and forming the CNT's 120, to be described furtherherein.

FIGS. 2 through 6 are cross-sectional views of a method of manufacturinga semiconductor device 100 at various stages of manufacturing inaccordance with some embodiments. To manufacture the semiconductordevice 100, first, a workpiece 102 is provided, as shown in FIG. 2. Theworkpiece 102 may include a semiconductor substrate comprising siliconor other semiconductor materials and may be covered by an insulatinglayer, for example. The workpiece 102 may also include other activecomponents or circuits, not shown. The workpiece 102 may comprisesilicon oxide over single-crystal silicon, for example. The workpiece102 may include other conductive layers or other semiconductor elements,e.g., transistors, diodes, etc. Compound semiconductors, GaAs, InP,Si/Ge, or SiC, as examples, may be used in place of silicon. Theworkpiece 102 may comprise a silicon-on-insulator (SOI) or agermanium-on-insulator (GOI) substrate, as examples.

A first insulating material 104 is formed over the workpiece 102, alsoshown in FIG. 2. The first insulating material 104 may comprise silicondioxide, silicon nitride, other insulating materials, or combinations ormultiple layers thereof, as examples. In some embodiments, the firstinsulating material 104 comprises a low dielectric constant (k)insulating material having a dielectric constant or k value less than adielectric constant of silicon dioxide, which is about 3.9. In otherembodiments, the first insulating material 104 comprises an extra low-k(ELK) insulating material having a k value of about 2.5 or less.Alternatively, the first insulating material 104 may comprise othermaterials and may comprise other k values. The first insulating material104 comprises a thickness of about 0.1 nm to about 20 nm, althoughalternatively, the first insulating material 104 may comprise otherdimensions. The first insulating material 104 may be formed or depositedusing chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), orcombinations thereof, as examples. Alternatively, other methods can beused to form the first insulating material 104. In some embodiments, thefirst insulating material 104 comprises a via level inter-metaldielectric (IMD), for example.

A damascene process for forming conductive features 106 within the firstinsulating material 104 will next be described. The first insulatingmaterial 104 is patterned using lithography with a pattern for aconductive feature. For example, a layer of photoresist (not shown) maybe formed over the first insulating material 104, and the layer ofphotoresist is patterned by exposure to energy transmitted through orreflected from a lithography mask having a desired pattern disposedthereon. The layer of photoresist is developed, and exposed (orunexposed, depending on whether the layer of photoresist comprises anegative or positive photoresist) are removed using an etching and/orashing process. The layer of photoresist is then used as an etch mask toetch away portions of the first insulating material 104, forming thepattern for the conductive feature 106 within the first insulatingmaterial 104. In some embodiments, only a top portion of the firstinsulating material 104 is patterned or removed, as shown in phantom(e.g., in dashed lines) at 104′ in FIG. 2.

A conductive material 106 is formed over the patterned first insulatingmaterial 104, also shown in FIG. 2. The conductive material 106comprises Cu, Fe, Co, Ni, alloys thereof, or combinations or multiplelayers thereof in some embodiments. Alternatively, the conductivematerial 106 may comprise other materials. The conductive material 106fills the pattern in the first insulating material 104 and also coversthe top surface of the first insulating material 104. The conductivematerial 106 may be formed using CVD, physical vapor deposition (PVD),electrochemical plating (ECP), electro-less plating, combinationsthereof, or other methods.

A chemical-mechanical polishing (CMP) process and/or etch process isused to remove the conductive material 106 from over the top surface ofthe insulating material 104, as shown in FIG. 3, leaving the conductivefeature 106 disposed within the insulating material 104. The conductivefeature 106 comprises a conductive line in some embodiments that extendsin and out of the paper in the view shown by a predetermined distance.The conductive feature 106 may alternatively comprise a conductive tracethat has a meandering pattern. A top portion of the insulating material104 may also be removed or recessed during the CMP process and/or etchprocess used to remove the conductive material 106 from the top surfaceof the insulating material 104, also shown in FIG. 3. Alternatively, theinsulating material 104 may not be recessed, and the top surface of theconductive material 106 comprising the conductive feature 106 may besubstantially co-planar with the top surface of the insulating material104, not shown in the drawings.

Alternatively, the conductive feature 106 may be formed using asubtractive process, also not shown in the drawings. For example, theconductive material 106 may be formed over the workpiece 102, and theconductive material 106 is then patterned using a lithography process.The first insulating material 104 is formed over the conductive material106, e.g., between adjacent conductive features 106. Only one conductivefeature 106 is shown in some of the drawings; however, a plurality ofconductive features 106 is formed across a surface of the workpiece 102of the semiconductor device 100 in some embodiments (see FIG. 16).

Referring again to FIG. 3, a second insulating material 114 is formedover the conductive feature 106 and the first insulating material 104.The second insulating material 114 may comprise a similar materialdescribed for the first insulating material 104 and may be formed usingsimilar methods described for the first insulating material 104. Thesecond insulating material 114 comprises a thickness of about 1 nm toabout 100 nm, although alternatively, the first insulating material 104may comprise other dimensions.

The second insulating material 114 is patterned using a lithographyprocess, as shown in FIG. 4, forming an opening over at least a portionof the conductive feature 106 and exposing a top surface of theconductive material 106.

Next, a graphene-based conductive layer 110 is formed over the exposedtop surface of the conductive feature 106 within the opening in thesecond insulating material 114, and a carbon-based adhesive layer 112 isformed over sidewalls of the opening in the second insulating material114, as shown in FIG. 5. The graphene-based conductive layer 110 overthe exposed top surface of the conductive feature 106 and thecarbon-based adhesive layer 112 on sidewalls of the patterned secondinsulating material 114 are simultaneously formed in some embodiments.The carbon-based adhesive layer 112 is also formed on the top surface ofthe second insulating material 114 in some embodiments. Thegraphene-based conductive layer 110 and the carbon-based adhesive layer112 are formed using a carbon deposition process 116 in someembodiments. The graphene-based conductive layer 110 and thecarbon-based adhesive layer 112 are formed using a gas-phase growthprocess in some embodiments. The graphene-based conductive layer 110 andthe carbon-based adhesive layer 112 are formed using CVD, atmosphericpressure CVD (APCVD), low-pressure CVD (LPCVD) at a sub-atmosphericpressure, PECVD, atomic layer CVD (ALCVD), or combinations thereof, asexamples, in some embodiments. The graphene-based conductive layer 110and the carbon-based adhesive layer 112 are formed using CH₄+H₂+Ar insome embodiments. Alternatively, other methods may be used to form thegraphene-based conductive layer 110 and the carbon-based adhesive layer112.

FIG. 6 is a more detailed cross-sectional view of a portion of thesemiconductor device 100 shown in FIG. 5 proximate the top surface ofthe conductive feature 106. To form the graphene-based conductive layer110, a gas flow 118 of CH₄+H₂+Ar is introduced into a chamber that thesemiconductor device 100 is being processed in. At time period 122, CH₄diffuses (e.g., as a gas layer near the surface, in a reaction-controlregion) onto the top surface of the conductive feature 106 and reachesthe top surface of the conductive feature 106. At time period 124, the Cwithin the CH₄ becomes adsorbed onto the surface of the conductivefeature 106, and the C molecules are decomposed to form active carbonspecies. The active carbon species are diffused onto the surface of thecatalyst (e.g., the material of the conductive feature 106 comprisingCu, Fe, Co, Ni, alloys thereof, or combinations thereof), or the activecarbon species are diffused into the catalyst close to the top surfaceof the conductive feature 106, to form a graphene lattice of a graphenesheet (GS) material. Inactive species, such as H, become desorbed fromthe surface and form molecular hydrogen. At time period 126, themolecular hydrogen (H₂) is diffused away from the top surface of theconductive feature 106 through the boundary layer and are swept away bythe bulk gas flow 118.

FIG. 7 is a perspective view of a graphene-based conductive layer 110comprising a plurality of graphene sheets (GS's) 128 in accordance withsome embodiments. The graphene-based conductive layer 110 comprises oneor more graphene sheets 128 that are formed on the top surface of theconductive feature 106 in accordance with some embodiments, for example.The graphene-based conductive layer 110 comprises a few layers ofgraphene sheets 128 formed by selective growth in some embodiments, forexample. The graphene sheets 128 are uniform and continuous, and areformed by layer-by-layer bottom-up growth in some embodiments. Thegraphene-based conductive layer 110 has a thickness of about 0.1 nm toabout 20 nm, in some embodiments. Alternatively, the graphene-basedconductive layer 110 may comprise other materials and dimensions, andmay be formed using other methods.

Simultaneous with the formation of the graphene sheets 128 of thegraphene-based conductive layer 110, the carbon-based adhesive layer 112(refer again to FIG. 5) is formed on the sidewalls of the pattern oropening in the second insulating material 114, due to the introductionof CH₄+H₂+Ar to the semiconductor device 100. The carbon-based adhesivelayer 112 comprises amorphous carbon having a thickness of about 0.1 nmto about 20 nm, in some embodiments. Alternatively, the carbon-basedadhesive layer 112 may comprise other materials and dimensions.

FIGS. 8 through 10 are cross-sectional views of a method ofmanufacturing a semiconductor device 100 at various stages ofmanufacturing in accordance with some embodiments, after themanufacturing steps shown in FIGS. 5, 6, and 7. A catalyst 111 isdeposited over the graphene-based conductive layer 110, as shown in FIG.8. The catalyst 111 comprises about 1 nm of a material such as Fe,although the catalyst 111 may alternatively comprise other materials anddimensions. The catalyst 111 is formed in the bottom surface of thepattern or opening in the second insulating material 114 and on the topsurface of the second insulating material 114, but not on the sidewallsof the pattern or opening in the second insulating material 114. Carbonnano-tubes (CNT's) 120 are then grown over the catalyst 111 and over thegraphene-based conductive layer 110, also shown in FIG. 8. Thesemiconductor device 100 is chemically-mechanically polished to removeexcess CNT 120 material and the catalyst 111 from over the top surfaceof the second insulating material 114. The CNT's 120 may comprise dozensor hundreds of CNT's that extend through the thickness of the secondinsulating material 114. The CNT's 120 are conductive and comprisehollow tubes in some embodiments. The CNT's 120 comprise a viainterconnect that is formed between an underlying conductive feature 106and an overlying conductive feature 136 (see FIG. 10) in someembodiments. The graphene-based conductive layer 110 advantageouslyreduces a contact resistance of the CNT's 120 comprising the viainterconnect in some embodiments.

The overlying conductive feature 136 is formed using a damascene processin some embodiments. A third insulating material 124 is formed over theCNT's 120 and the second insulating material 114, as shown in FIG. 9.The third insulating material 124 is patterned with a pattern for aconductive feature 136 that will be formed over the top surface of theCNT's 120 in some embodiments. A wet cleaning process is used to cleanthe semiconductor device 100 after the patterning of the thirdinsulating material 124 in some embodiments. A conductive material 136,shown in phantom in FIG. 9, is deposited or formed over the thirdinsulating material 124. A CMP process and/or etch process is used toremove excess conductive material 136 from over the top surface of thethird insulating material 124, leaving a conductive feature 136 formedwithin the third insulating material 124 over the CNT's 120, as shown inFIG. 10. In some embodiments, an electro-chemical plating (ECP) processis used to form the conductive feature 136. A CMP process and/or etchprocess may not be required, in these embodiments. The conductivefeatures 136 may also be formed using a subtractive etch process. Theconductive feature 136 comprises a conductive line or trace in someembodiments, as described for conductive feature 106. A plurality of theconductive features 136 is formed over a surface of the semiconductordevice 100 in some embodiments. The conductive feature 136 comprises Au,Ag, Al, Cu, Fe, Co, Ni, alloys thereof, or combinations or multiplelayers thereof formed using a similar method described for conductivefeature 106 in some embodiments, for example. Alternatively, theconductive feature 136 may comprise other materials and may be formedusing other methods.

Referring again to FIG. 1, a perspective view of a plurality of groupsof the CNT's 120 formed over the conductive feature 106 is shown. Aplurality of patterns may be formed within the second insulatingmaterial 114 over the top surface of a single conductive feature 106,and a plurality of CNT's 120 is formed within each of the plurality ofpatterns. An array of the patterns for CNT's 120 may be formed over asingle conductive feature 106, as illustrated in FIG. 1. The array ofthe CNT's 120 may comprise a square or rectangular shape in a top viewof the semiconductor device 100, for example. The array mayalternatively comprise other shapes in a top view, such as a circle,oval, trapezoid, or other shapes.

The interspaces of the CNT's 120 comprising hollow tubes are unfilled inthe embodiment shown in FIG. 10. In other embodiments, the interspacesof the CNT's 120 are filled with a conductive material, such as a metal.The metal encapsulates the CNT's 120, for example. FIGS. 11 through 13are cross-sectional views of a method of manufacturing a semiconductordevice 100 at various stages of manufacturing in accordance with someembodiments of the present disclosure, wherein the CNT's 120 areencapsulated with a metal such as Cu or a Cu alloy, although othermetals can be used. After the manufacturing process step shown in FIG.8, a conductive material 136′ comprising a metal is formed within theCNT 120 interspaces using an ALD process or other conformal depositionprocess, as shown in FIG. 11. The conductive material 136′ fills orencapsulates the interspaces of the CNT's 120 shown in FIG. 8, formingencapsulated CNT's 140 shown in FIG. 11. Excess portions of theconductive material 136′ and the catalyst 111 are removed from over thetop surface of the second insulating material 114 using a CMP process,and a third insulating material 124 is deposited or formed over thesecond insulating material 114 and the encapsulated CNT's 140. The thirdinsulating material 124 is patterned for a conductive feature 136, and aconductive feature 136 is formed within the pattern, as described forthe embodiment shown in FIGS. 9 and 10, e.g., using an ECP process orother process.

In other embodiments, an additional graphene-based conductive layer 110″is included in the semiconductor device 100, as shown in FIGS. 14 and15, which are cross-sectional views of a method of manufacturing asemiconductor device 100 at various stages of manufacturing inaccordance with some embodiments. The graphene-based conductive layer110 is also referred to herein as a first graphene-based conductivelayer 110, for example. After depositing a third insulating material 124and patterning the third insulating material 124 with a pattern for aconductive feature 136 as described with reference to FIG. 9, a secondgraphene-based conductive layer 110″ is formed in the bottom of thepattern for the conductive feature 136, as shown in FIG. 14. The secondgraphene-based conductive layer 110″ is formed using PECVD in someembodiments. The second graphene-based conductive layer 110′ is formedover a top surface of the plurality of CNT's 120 and over a top surfaceof a portion of the third insulating material 124.

In other embodiments, the second graphene-based conductive layer 110″ isformed using a similar gas-phase growth process used to form the firstgraphene-based conductive layer 110 and carbon-based adhesive layer 112as described for the previous embodiments. The carbon-based adhesivelayer 112 is also referred to herein as a first carbon-based adhesivelayer 112 in some embodiments. Forming the second graphene-basedconductive layer 110″ results in the formation of a second carbon-basedadhesive layer 112″ on sidewalls of the patterned third insulatingmaterial 124, as shown in phantom in FIG. 14.

A conductive feature 136 is then formed over the second graphene-basedconductive layer 110″ or over the second graphene-based conductive layer110″ and the second carbon-based adhesive layer 112″, if the secondcarbon-based adhesive layer 112″ is included. The conductive feature 136comprises a second conductive feature 136 that is formed using a similarmethod described for the previous embodiments and as shown in FIG. 15.In some embodiments, the conductive feature 136 is formed using an ECPprocess. Other methods described for the previous embodiments may alsobe used to form the conductive feature 136. The second graphene-basedconductive layer 110″ is disposed between the CNT 120 and the secondconductive feature 136.

FIG. 16 is a cross-sectional view of a semiconductor device 100 inaccordance with some embodiments. A plurality of layers of CNT's 120 and120′ or encapsulated CNT's 140 and 140′ are formed in via layers V_(x)and V_(x+1), respectively, of the semiconductor device 100. Each vialayer V_(x) and V_(x+1) of CNT's 120 and 120′ or encapsulated CNT's 140and 140′ is disposed between two conductive line layers M_(x) andM_(x+1), or M_(x+1) and M_(x+2), respectively. Only two via layers V_(x)and V_(x+1) and three conductive line layers M_(x), M_(x+1), and M_(x+2)are shown in FIG. 16; alternatively, many more via layers and conductiveline layers may be included in an interconnect structure of thesemiconductor device 100. In some embodiments, the interconnect layerscomprising via layers V_(x) and V_(x+1) and conductive line layersM_(x), M_(x+1), and M_(x+2) are formed in a back-end-of-line (BEOL)process for the semiconductor device 100. A catalyst 111 (not shown inFIG. 16; see FIG. 10) may be disposed between the graphene-basedconductive layer 110 and the CNT's 120 or 140. Likewise, a catalyst (notshown) may also be disposed between the graphene-based conductive layer110′ and CNT's 120′ or 140′, for example.

The embodiment shown in FIG. 16 also illustrates that the conductivefeatures 106 and 136 and CNT's 120 or 120′ or encapsulated CNT's 140 or140′ may be formed using dual damascene processes. For example, patternsfor conductive features 106 and CNT's 120 or encapsulated CNT's 140 canbe formed in a single insulating material 114 using two patterningsteps, and the patterned insulating material 114 can be processed andfilled using the methods described herein. Likewise, patterns forconductive features 136 and CNT's 120′ or encapsulated CNT's 140′ can beformed in a single insulating material 124 using two patterning steps,and the patterned insulating material 124 can be processed and filledusing the methods described herein. The top layer of conductive features136′ is formed in a single insulating material 134. Alternatively, eachvia layer V_(x) and V_(x+1) and each conductive line layer M_(x),M_(x+1), and M_(x+2) may be formed within a separate insulatingmaterial, not shown.

In some embodiments, one of the CNT's 120 comprises a first CNT 120. Thesemiconductor device 100 includes a plurality of second conductivefeatures 136 and 136′ disposed within a plurality of third insulatingmaterials 124 and 134. A second CNT 120′ is disposed between eachadjacent one of the plurality of second conductive features 136 and136′, as shown in FIG. 16.

FIG. 17 is a flow chart 160 of a method of manufacturing a semiconductordevice 100 in accordance with some embodiments, which is also shown inFIGS. 4, 5, and 8. In step 162, a workpiece 102 is provided thatincludes a conductive feature 106 formed in a first insulating material104 and a second insulating material 114 disposed over the firstinsulating material 104, the second insulating material 114 having anopening over the conductive feature 106 (see FIG. 4). In step 164, agraphene-based conductive layer 110 is formed over an exposed topsurface of the conductive feature 106 within the opening in the secondinsulating material 114 (see FIG. 5). In step 166, a carbon-basedadhesive layer 112 is formed over sidewalls of the opening in the secondinsulating material 114 (see also FIG. 5). In step 168, a CNT 120 isformed in the patterned second insulating material 114 over thegraphene-based conductive layer 110 and the carbon-based adhesive layer112 (see FIG. 8).

Some embodiments of the present disclosure include methods of formingsemiconductor devices 100, and also include semiconductor devices 100manufactured using the methods described herein.

Advantages of some embodiments of the disclosure include providing novelsemiconductor devices 100 that include CNT's 120 or 140 that includegraphene-based conductive layers 110 and carbon-based adhesive layers112. A novel CNT integration scheme is disclosed, wherein thegraphene-based conductive layers 110 reduce a contact resistance of avia interconnect formed from the novel CNT's 120 or 140. Viainterconnects formed from the novel CNT's 120 or 140 have an ultra-lowcontact resistance. Via interconnects including the CNT's 120 or 140have high current densities, excellent immunity to electromigration(EM), and superior electrical, thermal, and mechanical properties. Theformation methods used for the graphene-based conductive layers 110result in conformal and uniform deposition of the graphene-basedconductive layers 110, which subsequently improves the growth processfor the CNT's 120 or 140. The simultaneous approach of forming thegraphene-based conductive layer 110 and the carbon-based adhesive layer112 is straight-forward, effective, and controllable. In someembodiments, the graphene-based conductive layers 110 function asconductive glue layers that improve film adhesion, resulting indecreased interfacial resistance of the conductive feature 106,graphene-based conductive layer 110, and the CNT's 120 or 140. In someembodiments, synthesis methods used to form the graphene-basedconductive layer 110 include CVD, APCVD, LPCVD, PECVD, or ALCVD methods,which are very controllable and economical. Furthermore, the novelsemiconductor device 100 structures and designs are easily implementablein manufacturing process flows.

In accordance with some embodiments of the present disclosure, a methodof manufacturing a semiconductor device includes providing a workpieceincluding a conductive feature formed in a first insulating material anda second insulating material disposed over the first insulatingmaterial, the second insulating material having an opening over theconductive feature. The method includes forming a graphene-basedconductive layer over an exposed top surface of the conductive featurewithin the opening in the second conductive material, and forming acarbon-based adhesive layer over sidewalls of the opening in the secondinsulating material. A CNT is formed in the patterned second insulatingmaterial over the graphene-based conductive layer and the carbon-basedadhesive layer.

In accordance with other embodiments, a method of manufacturing asemiconductor device includes forming a first insulating material over aworkpiece, forming a conductive feature in the first insulatingmaterial, and forming a second insulating material over the conductivefeature and the first insulating material. The method includespatterning the second insulating material to expose a portion of a topsurface of the conductive feature, and simultaneously forming agraphene-based conductive layer over the exposed top surface of theconductive feature and a carbon-based adhesive layer on sidewalls of thepatterned second insulating material. A plurality of carbon nano-tubes(CNT's) is formed in the patterned second insulating material over thegraphene-based conductive layer and the carbon-based adhesive layer.

In accordance with other embodiments, a semiconductor device comprises aworkpiece including a conductive feature disposed in a first insulatingmaterial and a second insulating material disposed over the firstinsulating material, the second insulating material having an openingover the conductive feature. A graphene-based conductive layer isdisposed over an exposed top surface of the conductive feature withinthe opening in the second insulating material. A carbon-based adhesivelayer is disposed over sidewalls of the opening in the second insulatingmaterial. A CNT is disposed within the patterned second insulatingmaterial over the graphene-based conductive layer and the carbon-basedadhesive layer.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. For example, it will be readily understood by thoseskilled in the art that many of the features, functions, processes, andmaterials described herein may be varied while remaining within thescope of the present disclosure. Moreover, the scope of the presentapplication is not intended to be limited to the particular embodimentsof the process, machine, manufacture, composition of matter, means,methods and steps described in the specification. As one of ordinaryskill in the art will readily appreciate from the disclosure of thepresent disclosure, processes, machines, manufacture, compositions ofmatter, means, methods, or steps, presently existing or later to bedeveloped, that perform substantially the same function or achievesubstantially the same result as the corresponding embodiments describedherein may be utilized according to the present disclosure. Accordingly,the appended claims are intended to include within their scope suchprocesses, machines, manufacture, compositions of matter, means,methods, or steps.

1. A method of manufacturing a semiconductor device, the methodcomprising: providing a workpiece including a conductive feature formedin a first insulating material and a second insulating material disposedover the first insulating material, the second insulating materialhaving an opening over the conductive feature; forming a graphene-basedconductive layer over an exposed top surface of the conductive featurewithin the opening in the second insulating material; forming acarbon-based adhesive layer over sidewalls of the opening in the secondinsulating material; and forming a carbon nano-tube (CNT) in thepatterned second insulating material over the graphene-based conductivelayer and the carbon-based adhesive layer.
 2. The method according toclaim 1, further comprising simultaneously forming the graphene-basedconductive layer and the carbon-based adhesive layer.
 3. The methodaccording to claim 1, wherein forming the graphene-based conductivelayer and forming the carbon-based adhesive layer comprise a gas-phasegrowth process.
 4. The method according to claim 1, wherein forming thegraphene-based conductive layer and forming the carbon-based adhesivelayer comprise a process selected from the group consisting essentiallyof chemical vapor deposition (CVD), atmospheric pressure CVD (APCVD),low-pressure CVD (LPCVD) at a sub-atmospheric pressure, plasma enhancedCVD (PECVD), atomic layer CVD (ALCVD), and combinations thereof.
 5. Themethod according to claim 1, wherein forming the graphene-basedconductive layer comprises forming a plurality of graphene sheets(GS's).
 6. The method according to claim 1, wherein forming thecarbon-based adhesive layer comprises forming amorphous carbon.
 7. Themethod according to claim 1, wherein forming the graphene-basedconductive layer comprises forming a first graphene-based conductivelayer, and wherein the method further comprises forming a secondgraphene-based conductive layer on a top surface of the CNT.
 8. A methodof manufacturing a semiconductor device, the method comprising: forminga first insulating material over a workpiece; forming a conductivefeature in the first insulating material; forming a second insulatingmaterial over the conductive feature and the first insulating material;patterning the second insulating material to expose a portion of a topsurface of the conductive feature; simultaneously forming agraphene-based conductive layer over the exposed top surface of theconductive feature and a carbon-based adhesive layer on sidewalls of thepatterned second insulating material; and forming a plurality of carbonnano-tubes (CNT's) in the patterned second insulating material over thegraphene-based conductive layer and the carbon-based adhesive layer. 9.The method according to claim 8, wherein forming the conductive featurecomprises a damascene process or a subtractive etch process.
 10. Themethod according to claim 8, wherein simultaneously forming thegraphene-based conductive layer and the carbon-based adhesive layercomprises using CH₄+H₂+Ar.
 11. The method according to claim 8, whereinforming the plurality of CNT's comprises forming a via interconnect. 12.The method according to claim 11, wherein forming the graphene-basedconductive layer reduces a contact resistance of the via interconnect.13. The method according to claim 8, wherein the conductive featurecomprises a first conductive feature; wherein the method furthercomprises forming a third insulating material over the plurality ofCNT's and the second insulating material, patterning the thirdinsulating material to form an opening over top surfaces of each of theplurality of CNT's, and forming a conductive material in the patternedthird insulating material; and wherein the conductive material in thepatterned third insulating material comprises a second conductivefeature.
 14. The method according to claim 8, further comprising forminga conductive material over the second insulating material and theplurality of CNT's, and wherein forming the conductive materialcomprises encapsulating the plurality of CNT's with the conductivematerial. 15-20. (canceled)
 21. A method of manufacturing asemiconductor device, the method comprising: forming a patternedconductive feature in a first insulating material; forming a secondinsulating material over the first insulating material and the patternedconductive feature; patterning the second insulating material to form asecond opening having sidewalls therein, the second opening exposing aportion of the patterned conductive feature; simultaneously depositing agraphene-based conductive layer on exposed portion of the conductivefeature and a carbon-based conductive layer on the sidewalls of thesecond opening; depositing a catalyst on the graphene-based conductivelayer; and growing within the second opening a carbon nano-tube.
 22. Themethod of claim 21, further comprising growing a plurality of carbonnano-tubes within the second opening.
 23. The method of claim 22,further comprising filling interspaces between the carbon nano-tubeswith metal.
 24. The method of claim 21, wherein the step ofsimultaneously depositing a graphene-based conductive layer on exposedportion of the conductive feature and a carbon-based conductive layer onthe sidewalls of the second opening comprises a gas-phase growth processusing a CH₄ precursor.
 25. The method of claim 21, wherein the step ofdepositing a catalyst on the graphene-based conductive layer comprisesdepositing Fe on the graphene-based conductive layer, but not on thecarbon-based adhesive layer.
 26. The method of claim 21, wherein thecarbon-based conductive layer and the graphense-based conductive layerare simultaneously formed in a chamber wherein a gas flow of CH₄+H₂+Aris introduced.